us6m1 transistors rev.b 1/7 4v+2.5v drive nch+nch mosfet us6m1 z structure z dimensions (unit : mm) silicon n-channel / p-channel mosfet z features 1) low on-resistance. 2) built-in g-s pr otection diode. 3) small surface mount package (tumt6). z application power switching, dc / dc converter. z packaging specifications z equivalent circuit package code taping basic ordering unit (pieces) us6m1 tr 3000 type z absolute maximum ratings (ta=25 c) parameter v dss symbol v gss i d i dp i s i sp p d c tch 150 c tstg ? 55 to + 150 tr1 : nchannel tr2 : pchannel limits unit ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board. drain-source voltage gate-source voltage drain current total power dissipation channel temperature storage temperature continuous pulsed continuous source current (body diode) pulsed ? 1 v 30 v a a a a w / total ? 2 ? 1 20 1.4 5.6 0.6 5.6 1 w / element 0.7 ? 20 ? 12 1 4 ? 0.4 ? 4 z thermal resistance rth (ch-a) 125 parameter symbol limits unit channel to ambient c / w /total 179 c / w / element ? 2 mounted on a ceramic board. ? tumt6 abbreviated symbol : m01 0.2max. (1) tr1 (nch) source (2) tr1 (nch) gate (3) tr2 (pch) drain (4) tr2 (pch) source (5) tr2 (pch) gate (6) tr1 (nch) drain ? 1 esd protection diode ? 2 body diode ? 1 ? 1 ? 2 ? 2 (1) (6) (5) (4) (2) (3)
us6m1 transistors rev.b 2/7 n-ch z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. ? typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed ? ? ? ? ? ? ? ? ? ? 10 av gs = 20v, v ds = 0v v dd 15v r l = 11 ? 30 ?? vi d = 1ma, v gs = 0v ?? 1 av ds = 30v, v gs = 0v 1.0 ? 2.5 v v ds = 10v, i d = 1ma ? 170 240 i d = 1.4a, v gs = 10v ? 250 350 m ? i d = 1.4a, v gs = 4.5v ? 270 380 i d = 1.4a, v gs = 4v 1.0 ?? si d = 1.4a, v ds = 10v ? 70 ? pf v ds = 10v ? 15 12 ? pf v gs = 0v ? 6 ? pf f = 1mhz v gs = 10v r l = 21 ? r g = 10 ? ? 6 ? ns ? 13 ? ns ? 8 ? ns ? 1.4 ? ns ? 0.6 2.0 nc ? 0.3 ? nc v gs = 5v r g = 10 ? ?? nc i d = 1.4a i d = 0.7a, v dd 15v z body diode characteristics (source-drain) (ta=25 c) v sd ?? 1.2 v i s = 0.6a, v gs = 0v parameter symbol min. typ. max. unit test conditions forward voltage
us6m1 transistors rev.b 3/7 p-ch z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. ? typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ? ? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed ?? 10 av gs = 12v, v ds = 0v v dd ? 15v ? 20 ?? vi d = ? 1ma, v gs = 0v ??? 1 av ds = ? 20v, v gs = 0v ? 0.7 ?? 2.0 v v ds = ? 10v, i d = ? 1ma ? 280 390 i d = ? 1a, v gs = ? 4.5v ? 310 430 m ? i d = ? 1a, v gs = ? 4v ? 570 800 i d = ? 0.5a, v gs = ? 2.5v 0.7 ?? si d = ? 0.5a, v ds = ? 10v ? 150 ? pf v ds = ? 10v ? 20 20 ? pf v gs = 0v ? 9 ? pf f = 1mhz v gs = ? 4.5v r l = 30 ? r g = 10 ? ? 8 ? ns ? 25 ? ns ? 10 ? ns ? 2.1 ? ns ? 0.5 ? nc ? 0.5 ? nc v gs = ? 4.5v ?? nc i d = ? 1a i d = ? 0.5a, v dd ? 15v r l = 15 ? r g = 10 ? z body diode characteristics (source-drain) (ta=25 c) v sd ??? 1.2 v i s = ? 0.4a, v gs = 0v parameter symbol min. typ. max. unit test conditions forward voltage
us6m1 transistors rev.b 4/7 n-ch z electrical characteristic curves 1 10 100 1000 0.01 0.1 1 10 100 drain-source voltage : v ds (a) capacitance : c (pf) ta = 25 c f = 1mhz v gs = 0v fig.1 typical capacitance vs. drain-source voltage c iss c oss c rss 1 10 100 1000 0.01 0.1 1 10 drain current : i d (a) switching time : t (ns) ta = 25 c v dd = 15v v gs = 4.5v r g = 10 ? pulsed fig.2 switching characteristics t r t f t d (off) t d (on) 0 0.5 1 1.5 2 total gate charge : qg (nc) 0 1 2 3 4 5 6 gate-source voltage : v gs (v) ta = 25 c v dd = 15v i d = 1.5a r g = 10 ? pulsed fig.3 dynamic input characteristics 0.0 0.5 1.0 1.5 2.0 2.5 0.001 0.01 0.1 1 10 gate-source voltage : v gs (v) drain current : i d (a) fig.4 typical transfer characteristics v ds = 10v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 0123456789 gate-source voltage : v gs (v) 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 static drain-source on-state resistance : r ds (on) ( ? ) fig.5 static drain-source on-state resistance vs. gate-source voltage ta = 25 c pulsed i d = 0.75a i d = 1.5a 0.01 0.1 1 10 0.0 0.5 1.0 1.5 source-drain voltage : v sd (v) source current : i s (a) fig.6 source current vs. source-drain voltage v gs = 0v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 1 10 0.1 0.01 0.1 1 10 drain current : i d (a) static drain-source on-state resistance : r ds (on) ( ? ) fig.7 static drain-source on-state resistance vs. drain current ( ) v gs = 4.5v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 1 10 0.1 0.01 0.1 1 10 drain current : i d (a) v gs = 4.0v pulsed static drain-source on-state resistance : r ds (on) ( ? ) fig.8 static drain-source on-state resistance vs. drain current ( ? ) ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 1 10 0.1 0.01 0.1 1 10 v gs = 2.5v pulsed drain current : i d (a) static drain-source on-state resistance : r ds (on) ( ? ) fig.9 static drain-source on-state resistance vs. drain current ( ?? ) ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c
us6m1 transistors rev.b 5/7 p-ch z electrical characteristic curves 10 100 1000 0.01 0.1 1 10 100 drain-source voltage : ? v ds (v) capacitance : c (pf) ta = 25 c f = 1mhz v gs = 0v c iss c rss c oss fig.1 typical capacitance vs. drain-source voltage 1 10 1000 10000 100 0.01 0.1 1 10 drain current : ? i d (a) switching time : t (ns) ta = 25 c v dd = ? 15v v gs = ? 4.5v r g = 10 ? pulsed t d (off) t d (on) t r t f fig.2 switching characteristics ta = 25 c v dd = ? 15v i d = ? 1a r g = 10 ? pulsed 0 0.5 1 1.5 2 2.5 3 total gate charge : qg (nc) 0 1 2 3 4 5 6 7 8 gate-source voltage : ? v gs (v) fig.3 dynamic input characteristics 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 gate-source voltage : ? v gs (v) 0.001 0.01 0.1 1 10 drain current : ? i d (a) fig.4 typical transfer characteristics ta = 25 c v ds = ? 10v pulsed 024681012 gate-source voltage : ? v gs (v) 0 250 500 750 1000 static drain-source on-state resistance : r ds (on) ( m ? ) fig.5 static drain-source on-state resistance vs. gate-source voltage ta = 25 c pulsed i d = ? 1a i d = ? 0.5a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 source-drain voltage : ? v sd (v) 0.01 0.1 1 10 reverse drain current : ? i s (a) fig.6 source current vs. source-drain voltage v gs = 0v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 1000 10000 100 0.01 0.1 1 10 drain current : ? i d (a) static drain-source on-state resistance : r ds (on) ( m ? ) fig.7 static drain-source on-state resistance vs. drain current ( ) v gs = ? 4.5v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 1000 10000 100 0.01 0.1 1 10 drain current : ? i d (a) static drain-source on-state resistance : r ds (on) ( m ? ) fig.8 static drain-source on-state resistance vs. drain current ( ? ) v gs = ? 4v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 1000 10000 100 0.01 0.1 1 10 drain current : ? i d (a) static drain-source on-state resistance : r ds (on) ( m ? ) fig.9 static drain-source on-state resistance vs. drain current ( ?? ) v gs = ? 2.5v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c
us6m1 transistors rev.b 6/7 n-ch z measurement circuit fig.1-1 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t f t d(off) fig.2-1 gate charge measurement circuit v gs i g(const.) r g v ds d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd
us6m1 transistors rev.b 7/7 p-ch z measurement circuit fig.3-1 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd fig.3-2 switching waveforms 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t f t d(off) fig.4-1 gate charge measurement circuit v gs i g(const.) r g v ds d.u.t. i d r l v dd fig.4-2 gate charge waveform v g v gs charge q g q gs q gd
appendix appendix1-rev1.1 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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